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- W2030068848 abstract "Transparent conductive films of Al-doped zinc oxide (AZO) were deposited on glass substrates under various ZnO buffer layer deposition conditions (radio frequency (r.f.) power, sputtering pressure, thickness, and annealing) using r.f. magnetron sputtering at room temperature. This work investigates the influence of ZnO buffer layer on structural, electrical, and optical properties of AZO films. The use of grey-based Taguchi method to determine the ZnO buffer layer deposition processing parameters by considering multiple performance characteristics has been reported. Findings show that the ZnO buffer layer improves the optoelectronic performances of AZO films. The AZO films deposited on the 150-nm thick ZnO buffer layer exhibit a very smooth surface with excellent optical properties. Highly c-axis-orientated AZO/ZnO/glass films were grown. Under the optimized ZnO buffer layer deposition conditions, the AZO films show lowest electrical resistivity of 6.75 × 10−4 Ω cm, about 85% optical transmittance in the visible region, and the best surface roughness of Ra = 0.933 nm." @default.
- W2030068848 created "2016-06-24" @default.
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- W2030068848 date "2008-12-01" @default.
- W2030068848 modified "2023-10-18" @default.
- W2030068848 title "Influence of ZnO buffer layer on AZO film properties by radio frequency magnetron sputtering" @default.
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- W2030068848 doi "https://doi.org/10.1016/j.jeurceramsoc.2008.05.008" @default.
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