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• W2030230858 abstract "The same electron paramagnetic resonance active defects (C interactive dangling bonds), with similar behaviour with respect to B dose before (20 centres per B ion, amorphization threshold of 1015 cm−2) and after annealing at 800 °C (concentration reduced by 95%), are created by B implantation in chemically vapour deposited polycrystalline films and type IIa natural crystals of diamond. A broad 2.4 eV cathodoluminescence band (substitutional B), appears only in polycrystalline films. Its intensity relative to the 2.92 eV band increases with the B dose and decreases after annealing." @default.
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• W2030230858 date "1994-04-01" @default.
• W2030230858 modified "2023-10-04" @default.
• W2030230858 title "Characterization of defects in boron implanted chemically vapour deposited diamond films by electron paramagnetic resonance and cathodoluminescence" @default.
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• W2030230858 doi "https://doi.org/10.1016/0925-9635(94)90260-7" @default.
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