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- W2030253465 abstract "Ion beam mixing of Ti/Si, Fe/Si, and Ni/Si systems induced by 300 keV Kr+ irradiation, at room temperature, is studied by means of ac electrical resistance measurements and 2 MeV 1H+ Rutherford backscattering spectrometry (RBS). Both recoil and cascade mixing processes can transport Ti (or Ni) atoms into Si. The transition fluence occurs when the fluxes of these two processes are equal. It is found that only cascade mixing can transport Fe atoms into Si. RBS measurements show that the mixing efficiency of Ti with Si is higher than that of Ni. Mittels elektrischer Wechselspannungswiderstandsmessungen und 2 MeV-1H+-Rutherford-Rückstreuspektrometrie (RBS) wird die durch 300 keV Kr+-Bestrahlung bei Zimmertemperatur induzierte Ionenstrahlmischung von Ti/Si-, Fe/Si- und Ni/Si-Systemen untersucht. Sowohl Rückstoß- als auch Kaskadenmischungsprozesse können Ti(oder Ni)-Atome in das Si transportieren. Der Übergangsfluß tritt auf, wenn die Flüsse dieser beiden Prozesse gleich sind. Es wird gefunden, daß nur Kaskadenmischung Fe-Atome in das Si transportieren kann. RBS-Messungen zeigen, daß der Mischungswirkungsgrad von Ti mit Si höher ist als der von Ni." @default.
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- W2030253465 title "A comparison of ion beam induced atomic mixing kinetics of Ti/Si, Fe/Si, and Ni/Si systems. In situ electrical resistance and RBS measurements" @default.
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- W2030253465 doi "https://doi.org/10.1002/pssa.2211180216" @default.
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