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- W2030375648 abstract "In2O3:Sn (ITO) films were prepared on soda lime glass by evaporating suboxides and oxidizing these in air. The specific resistivity of the films showed a broad minimum of about 2×10-3ω cm for a doping level range of 10–30 wt.% SnO2 and they had decreased mobility (10 cm2 V-1 s-1) and carrier density (2×1020 cm-3) compared with high performance ITO films obtained by reactive evaporation onto a high temperature substrate. Unlike the behaviour of films treated in vacuum or in forming gases, the change in specific resistivity with oxidation for our films exhibited three characteristic stages: a sharp decrease accompanied by increasing transparency in the first stage, a steep increase in the second and a very slow increase in the third. The lowest resistivity was attained at the end of the first stage with a slight absorption. This change in resistivity was explained qualitatively on the basis of the diffusion model. It was also found that the resistivity could be further reduced if the residual gas pressure during the deposition was maintained as low as possible." @default.
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- W2030375648 title "Electrical properties of post-oxidized In2O3:Sn films" @default.
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- W2030375648 doi "https://doi.org/10.1016/0040-6090(81)90240-6" @default.
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