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- W2030444874 abstract "The interactions of hot electrons in semiconductor layers are usually studied assuming the scattering mechanisms affect only the injected hot electron distribution, leaving the cold electrons and the lattice in thermal equilibrium. However, if the energy transfer from hot to cold electrons is sufficiently large the cold electron distribution can be expected to be significantly modified. We have studied the interactions of injected hot electrons, passing briefly through a thin doped GaAs layer, with cold electrons confined in the layer." @default.
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- W2030444874 date "1994-05-15" @default.
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- W2030444874 title "Electron heating in GaAs due to electron-electron interactions" @default.
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- W2030444874 doi "https://doi.org/10.1103/physrevb.49.14762" @default.
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