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• W2030447752 abstract "The initial stages of the heteroepitaxial growth of GaSe thin films on GaAs(001), (111)A and (111)B surfaces have been studied by means of LEELS (low-energy electron-loss spectroscopy) and AFM (atomic force microscopy). GaSe films were grown on the substrates at 400°C using a single evaporation source of GaSe. The evolution of a LEELS spectrum with increase in film thickness reveals a difference in deposition depending on the surfaces. While only GaSe grows on GaAs(111)A and (111)B surfaces, the GaAs(001) surface first undergoes a deposition of Ga2Se3; subsequently GaSe grows on the thin Ga2Se3. In the AFM images of films with thickness of about 20 Å on GaAs(111)A and (111)B surfaces, steps with a height of a primitive layer thickness of GaSe are observed, thereby suggesting a primitive layer-by primitive layer growth of GaSe." @default.
• W2030447752 created "2016-06-24" @default.
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• W2030447752 date "1997-06-01" @default.
• W2030447752 modified "2023-09-26" @default.
• W2030447752 title "Substrate orientation dependence of the growth of GaSe thin films on GaAs" @default.
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• W2030447752 doi "https://doi.org/10.1016/s0169-4332(97)80136-5" @default.
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