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- W2030461108 abstract "AlxIn1 − xN (AlInN) films with x = 0.36 and 0.55 were grown on glass substrate by pulsed direct-current reactive sputtering. X-ray photoelectron spectroscopy depth profiles revealed that oxygen diffused from glass substrate to AlInN films at temperatures ≧ 300 °C. After applying AlN buffer layer, the crystallinity of AlInN films was markedly improved without oxygen contamination observed. The AlN-buffered AlInN films are c-axis-oriented with low full-width-at-half-maximum of 2.9°–3.5°, fine-grained, and low electron concentration, which are comparable with AlInN films grown by other high-temperature processes. AlN buffer layer is proved to be good seeding and diffusion-barrier layers for AlInN films deposited on glass substrates." @default.
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- W2030461108 date "2009-04-01" @default.
- W2030461108 modified "2023-10-17" @default.
- W2030461108 title "The effect of AlN buffer layer on properties of AlxIn1−xN films on glass substrates" @default.
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- W2030461108 doi "https://doi.org/10.1016/j.tsf.2008.10.101" @default.
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