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• W2030506422 abstract "In this paper, we discuss the surface doping in sexithiophene (T6) organic field-effect transistors by N,N′-bis (n-octyl)-dicyanoperylenediimide (PDI-8CN2). We show that an accumulation heterojunction is formed at the interface between the organic semiconductors and that the consequent band bending in T6 caused by PDI-8CN2 deposition can be addressed as the cause of the surface doping in T6 transistors. Several evidences of this phenomenon have been furnished both by electrical transport and photoemission measurements, namely, the increase in the conductivity, the shift of the threshold voltage, and the shift of the T6 highest occupied molecular orbital peak towards higher binding energies." @default.
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• W2030506422 date "2012-12-03" @default.
• W2030506422 modified "2023-09-26" @default.
• W2030506422 title "Surface doping in T6/PDI-8CN₂ heterostructures investigated by transport and photoemission measurements" @default.
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• W2030506422 doi "https://doi.org/10.1063/1.4769345" @default.
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