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• W2030531328 abstract "Optical and electrical properties of sputter-deposited FeSi2 thin films on p-Si(100) and SiO2/p-Si(100) substrates as well as their evolution with rapid thermal annealing (RTA) temperature have been investigated. Optical absorption measurements were carried out to determine the absorption spectra of FeSi2 based on the proposed optical absorption model for the double-layer and triple-layer structures. A direct band gap behavior was concluded for both amorphous and polycrystalline semiconducting FeSi2. An absorption coefficient in the order of 105 cm−1 at 1 eV and a band gap value of ∼0.86 eV were obtained for the β-FeSi2. Hall effect measurements at room temperature indicate heavily doped and n-type conductivity for the FeSi2 films on p-Si, whose residual carrier concentration was found to be closely correlated with the observed subgap optical absorption via band tailing. The carrier mobility was shown to increase with decreasing residual carrier concentration when the RTA temperature was increased." @default.
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• W2030531328 date "2008-09-15" @default.
• W2030531328 modified "2023-09-23" @default.
• W2030531328 title "Optical and electrical characterization of sputter-deposited FeSi2 and its evolution with annealing temperature" @default.
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• W2030531328 doi "https://doi.org/10.1063/1.2981198" @default.
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