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- W2030542487 abstract "Cross-sectional scanning tunneling microscopy (STM) has been used to study in-operation changes that occur at the active region of clean-cleaved semiconductor laser diodes. A tunneling model that allows the inclusion of tip-induced band bending and surface defect states has been used to study the origin of the surface changes which give rise to the observed modification. Low-doped layers close to the active region are found to undergo both a reduction in doping concentration and an increase in the surface defect state density as the lasers are operated. These changes ultimately lead to device failure. Under different tunneling modes STM can be sensitive to one effect or the other, and the importance of modeling the changes to confirm which are occurring is emphasized." @default.
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- W2030542487 date "2010-05-01" @default.
- W2030542487 modified "2023-09-23" @default.
- W2030542487 title "Analyzing real-time surface modification of operating semiconductor laser diodes using cross-sectional scanning tunneling microscopy" @default.
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- W2030542487 doi "https://doi.org/10.1063/1.3380826" @default.
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