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- W2030620910 abstract "In this paper, the making of polycrystalline silicon thin films as a seed layer for thicker polycrystalline thin film Si solar cells was investigated. The seed layer was crystallized using Aluminum-induced crystallization (AIC) in various process conditions in order to determine the optimized process parameters of AIC. The layer exchange process and the a-Si crystallization during AIC (annealing at 500 °C, 1 h) were observed. The crystallized and continuous poly-Si thin films were formed with the same thickness as Al layers. However, as the thickness of Al decreased, a continuous film became thinner and more protrusions were observed at film surface. The grain size of crystallized Si thin films ranged from 2000 Å to more than 1 μm. The hole concentration, Hall mobility, and resistivity were 3.79–7.00×1018 cm−3, 19.9–36.5 cm2/Vs, and 0.037–0.045 Ωcm, respectively. These results indicate that the fabrication of poly-Si thin films using AIC is an industrially relevant techniques because of low-temperature process and short processing time. The crystallized film with grains more than 2000 Å will be a good candidate of seed layers for liquid phase epitaxy." @default.
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- W2030620910 date "2002-04-01" @default.
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- W2030620910 title "A study of polycrystalline silicon thin films as a seed layer in liquid phase epitaxy using aluminum-induced crystallization" @default.
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- W2030620910 doi "https://doi.org/10.1016/s1567-1739(01)00084-0" @default.
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