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• W2030762487 abstract "Molecular Beam Epitaxy has successfully been used to grow GaN/InGaN heterostructures with cubic (zincblende) crystal structure. These efforts, despite the inherent difficulties due to the metastability of the cubic phase, led to substantial insight into the structural and optical properties of these semiconductors. The existence of submicrometer small In-rich inclusions in the InGaN layer has been revealed from photoluminescence and resonant Raman scattering experiments. It has been demonstrated that these nanostructures dominate the light emission process at room temperature. Models for the formation process are discussed." @default.
• W2030762487 created "2016-06-24" @default.
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• W2030762487 date "2003-05-01" @default.
• W2030762487 modified "2023-10-04" @default.
• W2030762487 title "Light emission from cubic InGaN nanostructures" @default.
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• W2030762487 doi "https://doi.org/10.1016/s0026-2692(03)00041-7" @default.
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