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W2030769790 abstract "Selective area growth (SAG) of GaN on (111) Si substrate was studied using AlGaN as an intermediate layer. A hexagonal dot with a (0001) plane on the top and of a 5 µm or a submicron size was obtained using a patterned dot structure of silicon dioxide (SiO 2 ) mask. The facet structure revealed that the <1120> axis of hexagonal GaN is parallel to the <110> axis of the Si substrate. The cathodoluminescence (CL) spectrum at 133 K exhibited a strong near-band-edge emission band for the submicron dots, which suggests excellent crystallinity. Epitaxial lateral overgrowth (ELO) of GaN on the Si substrate is demonstrated." @default.
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W2030769790 date "1998-08-01" @default.
W2030769790 modified "2023-09-27" @default.
W2030769790 title "Selective Area Growth of GaN on Si Substrate Using SiO<sub> 2</sub> Mask by Metalorganic Vapor Phase Epitaxy" @default.
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W2030769790 doi "https://doi.org/10.1143/jjap.37.l966" @default.
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