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• W2030778051 abstract "Stress and strain in single-crystal Ge and GaAs/Ge films grown on SiO2-coated Si substrates have been investigated through the Raman microprobe analysis. The Ge film is found to be subject to a tensile stress of (3.4–6.1)×109 dyne/cm2 and a strain of (2.4–4.3)×10−3 without distinguished spatial variation within a SiO2 island. The stress agrees well with that evaluated from the GaAs electroluminescence spectral shift with the deformation-potential model. The strain can be attributed dominantly to the thermal expansion difference between the Ge and the substrate Si. A large Raman spectral shift to the lower frequency side and a large linewidth for Ge have been observed in the seeding opening region, which represents Ge lattice disorder in this region." @default.
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• W2030778051 date "1985-01-15" @default.
• W2030778051 modified "2023-10-18" @default.
• W2030778051 title "Raman microprobe analysis of stress in Ge and GaAs/Ge on SiO₂‐coated Si substrates" @default.
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• W2030778051 doi "https://doi.org/10.1063/1.334800" @default.
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