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- W2030832006 abstract "High Ge fraction Si/Si1−xGex/Si heterostructures (x=0.5) are processed into the super self-aligned ultrashallow junction electrode (S3E) pMOSFETs. The ultrashallow junction is made from the selective epitaxial B-doped Si0.5Ge0.5 on source/drain grown by chemical vapor deposition (CVD) and subsequent thermal diffusion of B from B-Si0.5Ge0.5 into the substrate. The Ge fraction in the S3EMOSFETs’ buried layer changes to 0.35 after the B diffusion at 750 °C due to the interdiffusion between Si and Ge. The B diffusion depth in Si/SiGe/Si is shallower compared to that in Si. Compared to Si-channel S3EMOSFET, the maximum linear transconductance of the 0.12 μm gate Si0.65Ge0.35-channel S3EMOSFET increases by approximately 45%. The threshold voltage shift and the S factor degradation in the short channel region are well suppressed compared to the Si-channel S3EMOSFETs. It is suggested that the suppression of short channel effects is caused by the ultrashallow source/drain and the valence band discontinuity at the Si1−xGex/buffer Si interface." @default.
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- W2030832006 date "2004-03-01" @default.
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- W2030832006 title "Fabrication of 0.12 μm pMOSFETs on high Ge fraction Si/Si1−xGex/Si(1 0 0) heterostructure with ultrashallow source/drain formed using B-doped SiGe CVD" @default.
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- W2030832006 doi "https://doi.org/10.1016/j.apsusc.2003.08.052" @default.
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