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• W2030853018 abstract "Titanium diboride is a technologically important refractory conductor with a melting point of 3220 °C, a high electrical conductivity, and good wear and corrosion resistance. Thin films of TiB2 have been obtained at temperatures as low as 170 °C by thermal chemical vapor deposition from the halogen-free single-source precursor Ti(BH4)3(CH3OCH2CH2OCH3). Films deposited at temperatures below 200 °C are near stoichiometric, free of impurities, and amorphous as judged by X-ray diffraction. These films exhibit dense nucleation, including on SiO2 substrates, and have root-mean-square roughness, as measured by atomic force microscopy, of less than 1 nm for films 5−60 nm thick. At growth temperatures between 200 and 600 °C, the films are still amorphous but contain 12−15 atomic % oxygen and 15−20 atomic % carbon; these impurities are incorporated at the expense of boron. For growth at 800 °C and above, the films are crystalline, stoichiometric, and free of impurities. These high-temperature films are oriented in a preferred fashion with respect to the substrate: on Si(100) the films have a (101) orientation when grown at 800 °C but a (001) orientation when the films are grown at 900 °C. An amorphous TiB2 film, grown at 175 °C to a thickness of 7 nm, performs well as a diffusion barrier: no Cu diffuses across the TiB2 after thermal annealing at 600 °C for 30 min." @default.
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• W2030853018 date "2007-06-30" @default.
• W2030853018 modified "2023-09-25" @default.
• W2030853018 title "Titanium Diboride Thin Films by Low-Temperature Chemical Vapor Deposition from the Single Source Precursor Ti(BH₄)₃(1,2-dimethoxyethane)" @default.
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• W2030853018 doi "https://doi.org/10.1021/cm070277z" @default.
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