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- W2030904776 abstract "High-resolution time-resolved measurements and deep level transient spectroscopy (DLTS) measurements on InxGa1−xAs/GaAs-on-GaAs superlattices grown by molecular-beam epitaxy with InAs content x from 0% to 63% are presented. The pulse response of metal-semiconductor-metal photodetectors (MSMPDs) on these layers varies from transit-time-limited responses to ultrafast lifetime-limited responses with electron and hole lifetimes of 3 and 15 ps. DLTS measurements on the superlattices and a two-dimensional self-consistent numerical simulation of the MSMPDs pulse response indicate a strong influence of the oxygen related electron trap EL3 on the electron lifetimes. The dark currents range between 500 pA and 700 nA at 5 V for 20×20 μm2 devices and the spectral response shows cutoff wavelengths up to 1550 nm." @default.
- W2030904776 created "2016-06-24" @default.
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- W2030904776 date "1995-02-15" @default.
- W2030904776 modified "2023-10-03" @default.
- W2030904776 title "Carrier trapping in ultrafast metal-semiconductor-metal photodetectors on InGaAs/GaAs-on-GaAs superlattices" @default.
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- W2030904776 doi "https://doi.org/10.1063/1.358875" @default.
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