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• W2030939969 startingPage "1258" @default.
• W2030939969 abstract "The lattice thermal conductivity ${ensuremath{lambda}}_{g}$ of three heavily doped (${10}^{18}$ ${mathrm{cm}}^{ensuremath{-}3}$) $p$-type samples of InSb has been determined in the temperature range 1.3-4.2 ifmmode^circelsetextdegreefi{} K. The data are fitted to a phenomenological model including boundary scattering, Rayleigh scattering due to impurities and isotopes, and the scattering of phonons by charge carriers. That the charge carriers are a significant source of scattering is indicated by a general ${T}^{2}$ behavior at the lowest temperatures and by a rapid increase in ${ensuremath{lambda}}_{g}$ at the higher temperatures because of phonons which have wave-propagation vectors larger than the diameter of the Fermi surface, and which therefore cannot be scattered by charge carriers. A probable screening in the carrier-phonon interaction is apparent from the lowest-temperature behavior of ${ensuremath{lambda}}_{g}$. In general, a good fit is made using the theories of charge-carrier-phonon interactions developed for the treatment of ultrasonic attenuation." @default.
• W2030939969 created "2016-06-24" @default.
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• W2030939969 date "1971-08-15" @default.
• W2030939969 modified "2023-10-14" @default.
• W2030939969 title "Thermal Conductivity of Heavily Dopedp-Type InSb at Liquid-Helium Temperatures" @default.
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• W2030939969 doi "https://doi.org/10.1103/physrevb.4.1258" @default.
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