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- W2030989836 abstract "Bandgap tailoring and lattice-matching in SiGeC/Si heterostructures has potential for improving the performance and capabilities of Si based optoelectronics. Although remarkable progress in the molecular beam epitaxy (MBE) of SiGeC/Si heterostructures has been achieved, important questions concerning growth kinetics and thermal stability are still not fully understood. One major obstacle during MBE growth of these heterostructures may be the high surface diffusivity of carbon, which leads to small fractions of substitutional carbon at temperatures necessary for device quality epitaxial growth. We report on the surface kinetic properties of Si 0.992 Co 0.009 /Si and thermal stability of strained Si 0.992 C 0.008 /si and strain compensated Si 0.892 Ge 0.10 C 0.008 /Si heterostructures grown by MBE. For the first time, a single silicon-graphite source was used for the co-evaporation of silicon-carbon molecular species. For substrate temperatures up to 600°C ratios of substitutional to total carbon concentration as high as 0.75 were observed. Remarkably, this exceeds the fraction of substitutional carbon obtained by sublimating a graphite filament at similar growth temperatures. Strain compensated Si 0.892 Ge 0.10 Co 0.008 /Si alloys were shown to be more stable then the binary Si 0.992 C 0.008 /Si heterostructure alloys." @default.
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- W2030989836 date "1998-01-12" @default.
- W2030989836 modified "2023-09-23" @default.
- W2030989836 title "MBE growth kinetics and thermal stability of Si 1-x-y Ge x C y /Si heterostructures" @default.
- W2030989836 doi "https://doi.org/10.1117/12.298210" @default.
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