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• W2031004000 abstract "In this work the results of Linear Raman Spectroscopy experiments on hafnium dioxide (HfO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> ) thin films deposited by magnetron sputtering using different deposition conditions and post-deposition annealing are reported. Raman bands were identified considering the active symmetry modes expected from a tetragonal or monoclinic phase. The as-deposited HfO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</inf> film using the Hf target exhibits a tetragonal phase, what is likely due to a crystallite size effect. However, as-deposited HfO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</inf> film using the HfO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> target is amorphous. As the annealing temperature increases both films begin to become amorphous. At 600 °C they start to crystallize into a stable monoclinic phase." @default.
• W2031004000 created "2016-06-24" @default.
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• W2031004000 date "2012-04-01" @default.
• W2031004000 modified "2023-09-27" @default.
• W2031004000 title "Phase transition in sputtered HfO<inf>2</inf> thin films: A qualitative raman study" @default.
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• W2031004000 doi "https://doi.org/10.1109/ccece.2012.6335030" @default.
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