FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2031080691> ?p ?o ?g. }

• W2031080691 endingPage "116505" @default.
• W2031080691 startingPage "116505" @default.
• W2031080691 abstract "The material removal characteristics of a silicon wafer were experimentally investigated with respect to the chemical dissolution and mechanical abrasion of the wafer during silicon chemical mechanical polishing (CMP) using an alkali-based slurry. The silicon surface without native oxide is rapidly dissolved by the slurry containing an amine agent, which effectively leads to the reduced hardness of the loaded silicon wafer due to Si–Si bond breaking during polishing. The abrasive particles in the slurry easily remove the reacted silicon surface, and the removal rate and wafer non-uniformity for abrasive concentrations of 1.5–3 wt % are better than those for other concentrations because of the low and steady coefficient of friction (COF) owing to the evenness of abrasive particles between the wafer and pad. Also, it was found that a high slurry flow rate of 700–1000 cm3/min improves wafer non-uniformity owing to the reduced temporal variation of temperature, because the slurry acts as a good cooling source during polishing. However, the removal rate remains almost constant upon varying the slurry flow rate because of the effective dissolution characteristic of the slurry with abundant amine as an accelerator, regardless of the reduction of average temperature with increasing slurry flow rate. In the break-in process used to stabilize the material removal, the viscoelastic behaviors of the pad and the ground wafer surface with native oxide and wheel marks cause a temporal change of the friction force during polishing, which is related to the removal rate and wafer non-uniformity. As a result, the stabilization of removal rate and wafer non-uniformity is achieved through a steady-state process with elevated temperature and reduced COF after a total polishing time of 60 min, based on the removal process of the wafer surface and the permanent deformation in the viscoelastic behavior of the pad." @default.
• W2031080691 created "2016-06-24" @default.
• W2031080691 creator A5002687722 @default.
• W2031080691 creator A5010766493 @default.
• W2031080691 creator A5013627676 @default.
• W2031080691 creator A5021280102 @default.
• W2031080691 creator A5033924088 @default.
• W2031080691 creator A5076647684 @default.
• W2031080691 date "2009-11-20" @default.
• W2031080691 modified "2023-09-26" @default.
• W2031080691 title "Experimental Investigation of Material Removal Characteristics in Silicon Chemical Mechanical Polishing" @default.
• W2031080691 cites W1864060458 @default.
• W2031080691 cites W1972207333 @default.
• W2031080691 cites W1991371654 @default.
• W2031080691 cites W1995971243 @default.
• W2031080691 cites W1998472711 @default.
• W2031080691 cites W2005159450 @default.
• W2031080691 cites W2005312984 @default.
• W2031080691 cites W2018792032 @default.
• W2031080691 cites W2023152114 @default.
• W2031080691 cites W2034563110 @default.
• W2031080691 cites W2034644802 @default.
• W2031080691 cites W2036515671 @default.
• W2031080691 cites W2037512147 @default.
• W2031080691 cites W2046762144 @default.
• W2031080691 cites W2059699425 @default.
• W2031080691 cites W2065137180 @default.
• W2031080691 cites W2066362132 @default.
• W2031080691 cites W2072806971 @default.
• W2031080691 cites W2075398095 @default.
• W2031080691 cites W2100342067 @default.
• W2031080691 cites W2105750536 @default.
• W2031080691 cites W2106409363 @default.
• W2031080691 cites W2127767984 @default.
• W2031080691 cites W2143655111 @default.
• W2031080691 cites W2151965976 @default.
• W2031080691 doi "https://doi.org/10.1143/jjap.48.116505" @default.
• W2031080691 hasPublicationYear "2009" @default.
• W2031080691 type Work @default.
• W2031080691 sameAs 2031080691 @default.
• W2031080691 citedByCount "16" @default.
• W2031080691 countsByYear W20310806912012 @default.
• W2031080691 countsByYear W20310806912013 @default.
• W2031080691 countsByYear W20310806912015 @default.
• W2031080691 countsByYear W20310806912016 @default.
• W2031080691 countsByYear W20310806912017 @default.
• W2031080691 countsByYear W20310806912019 @default.
• W2031080691 countsByYear W20310806912021 @default.
• W2031080691 countsByYear W20310806912022 @default.
• W2031080691 countsByYear W20310806912023 @default.
• W2031080691 crossrefType "journal-article" @default.
• W2031080691 hasAuthorship W2031080691A5002687722 @default.
• W2031080691 hasAuthorship W2031080691A5010766493 @default.
• W2031080691 hasAuthorship W2031080691A5013627676 @default.
• W2031080691 hasAuthorship W2031080691A5021280102 @default.
• W2031080691 hasAuthorship W2031080691A5033924088 @default.
• W2031080691 hasAuthorship W2031080691A5076647684 @default.
• W2031080691 hasBestOaLocation W20310806912 @default.
• W2031080691 hasConcept C127413603 @default.
• W2031080691 hasConcept C138113353 @default.
• W2031080691 hasConcept C159985019 @default.
• W2031080691 hasConcept C160671074 @default.
• W2031080691 hasConcept C171250308 @default.
• W2031080691 hasConcept C180088628 @default.
• W2031080691 hasConcept C191897082 @default.
• W2031080691 hasConcept C192562407 @default.
• W2031080691 hasConcept C2780957350 @default.
• W2031080691 hasConcept C42360764 @default.
• W2031080691 hasConcept C544956773 @default.
• W2031080691 hasConcept C88380143 @default.
• W2031080691 hasConcept C94293008 @default.
• W2031080691 hasConceptScore W2031080691C127413603 @default.
• W2031080691 hasConceptScore W2031080691C138113353 @default.
• W2031080691 hasConceptScore W2031080691C159985019 @default.
• W2031080691 hasConceptScore W2031080691C160671074 @default.
• W2031080691 hasConceptScore W2031080691C171250308 @default.
• W2031080691 hasConceptScore W2031080691C180088628 @default.
• W2031080691 hasConceptScore W2031080691C191897082 @default.
• W2031080691 hasConceptScore W2031080691C192562407 @default.
• W2031080691 hasConceptScore W2031080691C2780957350 @default.
• W2031080691 hasConceptScore W2031080691C42360764 @default.
• W2031080691 hasConceptScore W2031080691C544956773 @default.
• W2031080691 hasConceptScore W2031080691C88380143 @default.
• W2031080691 hasConceptScore W2031080691C94293008 @default.
• W2031080691 hasIssue "11" @default.
• W2031080691 hasLocation W20310806911 @default.
• W2031080691 hasLocation W20310806912 @default.
• W2031080691 hasOpenAccess W2031080691 @default.
• W2031080691 hasPrimaryLocation W20310806911 @default.
• W2031080691 hasRelatedWork W1968031169 @default.
• W2031080691 hasRelatedWork W1995265102 @default.
• W2031080691 hasRelatedWork W2013921521 @default.
• W2031080691 hasRelatedWork W2072988759 @default.
• W2031080691 hasRelatedWork W2106409363 @default.
• W2031080691 hasRelatedWork W2114371462 @default.
• W2031080691 hasRelatedWork W2314263575 @default.
• W2031080691 hasRelatedWork W2440599411 @default.
• W2031080691 hasRelatedWork W2753607170 @default.

• next