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- W2031141544 abstract "We have investigated the molecular beam epitaxial growth and characterization of InN nanowires. Detailed optical and electrical transport studies confirm that nondoped InN nanowires can exhibit extremely low (< 10<sup>15</sup> cm<sup>-3</sup>) residual electron density. Furthermore, the near-surface Femi-level was measured to be 0.4 to 0.5 eV above the valence band maximum (VBM), suggesting the absence of Fermi-level pinning and surface electron accumulation. These features are fundamentally different from those of n-type degenerate InN nanowires or InN epilayers. The absence of surface electron accumulation was also observed in Mg-doped InN nanowires, where p-type conduction was directly measured via Mg-doped InN nanowire field-effect transistors. Furthermore, the near-surface Fermi-level can be tuned from 0.1 eV to 1 eV above the VBM, i.e., from p-type degenerate to n-type degenerate through controlled Mg and Si dopant incorporations, a first demonstration for any semiconducting nanowire structures." @default.
- W2031141544 created "2016-06-24" @default.
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- W2031141544 date "2014-02-19" @default.
- W2031141544 modified "2023-09-23" @default.
- W2031141544 title "Molecular beam epitaxial growth and characterization of intrinsic and p-type InN nanowires" @default.
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- W2031141544 doi "https://doi.org/10.1117/12.2038663" @default.
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