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- W2031170057 abstract "The influence of ionization created by low energy electrons on the transformations of defects in carbon implanted Si during thermal treatment in the range 200 to 500 °C (50 °C steps) is studied by the DLTS technique. Silicon single crystals implanted with caibon ions (1 × 1014 cm−2, 100 keV) are subjected to a 100 keV electron beam with a flucnce of 8 μA/cm2. The results obtained show that ionization influences significantly the generation and stability of the defects. The ionization assisted transformation processes may play a role in the previously discussed mechanisms of enhanced diffusion or enhanced recrystallisation of the implanted crystals. On a etudié 1'influence de 1'ionisation sur le transformation des défauts pendant recuit thermique dans la gamme de temperature bas (200 à 500 °C) dans la couche silicium implantee par les ions de charbon (1 × 1014 cm−2, 100 keV). Les couches de silicium pendant traitment thermique out été irradié par le faisceau d'electrons d'energie de 100 keV et 1'intensite de courant 8 μA/cm2. La methode spectroscopie capacitive (DLTS) a été utilisé dans 1'experience. Les resultats obtenus montre que 1'ionisation a influence sur la generation et stabilité thermique des defauts. Les effets observées peuvent jouer un rôle dans les mechanismes de diffusion ou recristallisation accelerées observées dans les couches implantées." @default.
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- W2031170057 date "1989-03-16" @default.
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- W2031170057 title "Ionization Assisted Transformations of Defects in Carbon Implanted Silicon" @default.
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- W2031170057 doi "https://doi.org/10.1002/pssa.2211120154" @default.
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