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• W2031170960 abstract "Abstract Calculations are reported of the frequency response of an amorphous semiconductor in which potential fluctuations lower the conduction band edge in local regions of the material. The calculations are performed using a three-dimensional effective-medium method. For an exponential distribution of potential fluctuations with energy parameter kBT0 the calculations predict a power-law frequency response with exponent 1 — T/T0 and a loss peak close to the transition from non-dispersive to dispersive behaviour. The calculations are consistent with, but more physically realistic than, those performed using a recent one-dimensional model. The results are in qualitative agreement with recently reported measurements of the response of intrinsic hydrogenated amorphous silicon." @default.
• W2031170960 created "2016-06-24" @default.
• W2031170960 creator A5057330753 @default.
• W2031170960 date "1989-03-01" @default.
• W2031170960 modified "2023-09-23" @default.
• W2031170960 title "The frequency response of an inhomogeneous amorphous semiconductor" @default.
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• W2031170960 doi "https://doi.org/10.1080/13642818908220185" @default.
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