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- W2031290914 abstract "Ion implanted polysilicon is a key material in CMOS BICMOS and bipolar processing. The evolution of these devices toward the submicron regime has raised new challenges for the technologies of ion implant and rapid thermal processing (RTP) to provide p+ gates and p+ shallow junctions. Rapid thermal annealing of high dose boron implanted polysilicon provides solutions for major problems related to p+ shallow junction formed by furnace and RTP activation of direct implants into single crystal silicon. This work demonstrates how supersaturated polysilicon films with high conductivity fabricated with I/I and RTP can provide uniformly doped p+ gates interconnects and diffusion sources for abrupt shallow p+ junctions. It is an elaboration of earlier work and is covered by a patented technology 16 1." @default.
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- W2031290914 date "1991-04-01" @default.
- W2031290914 modified "2023-09-27" @default.
- W2031290914 title "<title>High-dose boron implantation and RTP anneal of polysilicon films for shallow junction diffusion sources and interconnects</title>" @default.
- W2031290914 doi "https://doi.org/10.1117/12.25726" @default.
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