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- W2031331569 abstract "The up-to-date technology of semiconductor devices employs a number of doping procedures for semiconductor materials including epitaxy from the gaseous and liquid phases, diffusion, variation of the crystal growth conditions by a particular program1. These pro-cedures are time-consuming and complicated, since they involve a series of accurate and laborious processes. Besides, the doped layers thus obtained feature a large thickness ,and p-n junctions - a large depth." @default.
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- W2031331569 date "1989-05-18" @default.
- W2031331569 modified "2023-10-18" @default.
- W2031331569 title "Solid-Phase Laser Doping Of Silicon" @default.
- W2031331569 doi "https://doi.org/10.1117/12.950631" @default.
- W2031331569 hasPublicationYear "1989" @default.
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