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• W2031490396 endingPage "03CB04" @default.
• W2031490396 startingPage "03CB04" @default.
• W2031490396 abstract "The effects of the oxygen partial pressure [ p (O 2 )] during ZnO sputtering on the photo-leakage current of a ZnO thin-film transistor (TFT) were investigated. The photo-leakage current increased with decreasing p (O 2 ). When the photon energy of incident light is smaller than the band-gap of the ZnO, electrons are excited from the trapped states existing near the valence band. It was found that the density of the electron traps increased when the p (O 2 ) decreased. Moreover, the trap states were formed at ∼0.5 eV and 2.8–3.2 eV from the conduction band ( E C ) when the p (O 2 ) decreased. The traps formed at ( E C - E ) of ∼0.5 eV affect the subthreshold characteristics in the dark state, while the traps formed at ( E C - E ) of 2.8–3.2 eV affect the photo-leakage current of the ZnO TFTs." @default.
• W2031490396 created "2016-06-24" @default.
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• W2031490396 date "2012-03-01" @default.
• W2031490396 modified "2023-09-27" @default.
• W2031490396 title "Photo-Leakage Current of Thin-Film Transistors with ZnO Channels Formed at Various Oxygen Partial Pressures under Visible Light Irradiation" @default.
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• W2031490396 doi "https://doi.org/10.1143/jjap.51.03cb04" @default.
• W2031490396 hasPublicationYear "2012" @default.
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