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- W2031538274 abstract "A thermal-etching process for fabricating nanoporous GaN templates in a metalorganic vapor phase epitaxy (MOVPE) reactor was proposed. Such nanoporous templates exhibited nearly complete strain relaxation and considerably increased photoluminescence (PL) intensity. The threading dislocation density (TDD) after overgrowth was reduced from 3 ×10 9 to 4 ×10 8 cm -2 for the template with poor quality, whereas little improvement was observed for the high-quality template (TDD, 4 ×10 8 cm -2 ). Multiple quantum wells (MQWs) grown on a nanoporous template fabricated from the high-quality GaN template were used to assess the effect on LED performance. The PL intensity of the sample with a nanoporous structure showed a twofold increase in PL intensity compared with the control sample." @default.
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- W2031538274 date "2013-05-20" @default.
- W2031538274 modified "2023-10-16" @default.
- W2031538274 title "GaN Overgrowth on Thermally Etched Nanoporous GaN Template" @default.
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- W2031538274 doi "https://doi.org/10.7567/jjap.52.08jb03" @default.
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