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- W2031575897 abstract "Electrical characteristics of field-effect thin-film transistors (TFTs) with p-channels composed of CdTe/CdHgTe core-shell nanocrystals are investigated in this work. For the fabrication of bottom- and top-gate TFTs, CdTe/CdHgTe core-shell nanocrystals synthesized by the colloidal method are first dispersed on oxidized p^+ Si substrates by spin-coating, the dispersed nanocrystals are sintered at 150^oC to form the channels for the TFTs, and Al2O3 layers are deposited on the channels. A representative bottom-gate field-effect TFT with a bottom-gate SiO2 layer exhibits a mobility of 0.21cm^2/Vs and an Ion/Ioff ratio of 1.5x10^2, and a representative top-gate field-effect TFT with a top-gate Al2O3 layer provides a field-effect mobility of 0.026cm^2/Vs and an Ion/Ioff ratio of 2.5x10^2. The CdTe/CdHgTe nanocrystal-based TFTs with bottom- and top-gate geometries are compared in this paper." @default.
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- W2031575897 date "2007-05-01" @default.
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- W2031575897 title "Fabrication of thin-film transistors based on CdTe/CdHgTe core-shell nanocrystals" @default.
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- W2031575897 doi "https://doi.org/10.1016/j.mee.2007.01.260" @default.
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