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• W2031838806 abstract "Measurement of electrical properties, etch rates in HF (49%) and HF-HNO 3 (49% HF:63% HNO 3 =1:20) solutions and X-ray photoemission spectra are reported for amorphous silicon-oxygen alloy films (a-SiO x :H) prepared by r. f. glow discharge decomposition of a SiH 4 -CO 2 gas mixture. Activated band conduction is observed in the temperature range of 324-424 K. Though the addition of oxygen causes a decrease in the conductivity, the activation energy for conduction remains at a constant value of around 1.0 eV in the films with oxygen content x from 0.17 to 0.5. The broadening toward the high binding energy of the Si-2p core level in X-ray photoemission spectra with oxygen content is explained by the effects of oxygen atoms incorporated into the films." @default.
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• W2031838806 date "1991-12-01" @default.
• W2031838806 modified "2023-09-27" @default.
• W2031838806 title "Properties of Silicon-Oxygen Alloy Films Prepared from SiH₄+CO₂ Gas Mixture" @default.
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• W2031838806 doi "https://doi.org/10.1143/jjap.30.3331" @default.
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