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• W2031852693 abstract "The defects created during Ar-ion beam etching of Si-doped n-GaAs were envisaged by means of a charge version of deep-level transient spectroscopy [DLTS — D.V. Lang, J. Appl. Phys. 45 (1974) 3023]. For ion beam energies from 200 to 700 eV there are two groups of radiation-induced gap states: a discrete energy level identified by its ionization enthalpy of 0.28 eV and a continuous distribution of surface traps in both energy and capture cross section. Excess time-domain capacitance could be observed under zero or reverse biases that is simply related to the response of the defect states. Addition of a few % of hydrogen to the Ar-ion beam manifested itself by lowering the charge-carrier density in the surface region of the heavily doped GaAs, while inducing a capacitance plateau in the C–U characteristics of Al/GaAs diodes at low temperatures. Despite only minor changes in the DLTS spectra in case of moderately doped GaAs, the incorporation of hydrogen to GaAs led to observable hysteresis in the C–U behaviour. Finally, the nearly exponential response to a small voltage step of the continuum of surface states is treated with emphasis on the expected high resistivity of the damaged interlayer and an additional ultra-thin (8 nm) oxide layer." @default.
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• W2031852693 date "1994-02-01" @default.
• W2031852693 modified "2023-10-18" @default.
• W2031852693 title "Excess capacitance of Al/n-GaAs Schottky diodes prepared on Ar-(Ar + H)-ion-beam-etched surfaces" @default.
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• W2031852693 doi "https://doi.org/10.1016/0169-4332(94)90296-8" @default.
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