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• W2031951349 startingPage "12" @default.
• W2031951349 abstract "The fabrication of highly (100) oriented Co2MnGe thin film by using a Cr buffer layer and an underlayer deposited under various conditions on a thermally oxidized Si substrate was investigated. The main results are as follows : (1) The Cr buffer layer deposited under optimized conditions had a strong (100) orientation on the Ni-Ta underlayer. (2) The Co2MnGe layer had a strong (100) orientation on the (100) oriented Cr buffer layer with a large saturation magnetization of 860 emu/cc, which is almost the same as the case of the (100) epitaxial Co2MnGe layer fabricated on an MgO (100) substrate. As a result, we succeeded in fabricating a magnetic tunnel junction of MnIr(100)/Co2MnGe(100)/MgO(100)/Co2MnGe(100)/Cr(100) with a low surface roughness on a thermally oxidized Si substrate." @default.
• W2031951349 created "2016-06-24" @default.
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• W2031951349 date "2008-01-01" @default.
• W2031951349 modified "2023-09-25" @default.
• W2031951349 title "Fabrication of Highly (100) Oriented Co2MnGe Thin Films and Magnetic Tunnel Junctions with Co2MnGe (100) Film on Non-single-crystal Substrate" @default.
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• W2031951349 doi "https://doi.org/10.3379/msjmag.32.12" @default.
• W2031951349 hasPublicationYear "2008" @default.
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