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- W2031998049 abstract "This study aims to fabricate high aspect ratio through-wafer copper interconnects by a simple reverse pulse electroplating technique. High aspect-ratio (~18) through-wafer holes obtained by a two-step deep reactive ion etching (DRIE) process exhibit a taper profile, which might automatically optimize the local current density distribution during the electroplating process, thereby achieving void-free high aspect-ratio copper vias." @default.
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- W2031998049 date "2009-05-20" @default.
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- W2031998049 title "Fabrication of high aspect ratio through-wafer copper interconnects by reverse pulse electroplating" @default.
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