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• W2032016243 startingPage "073506" @default.
• W2032016243 abstract "Two-state gate current characteristic of the metal-oxide-semiconductor capacitor structure, after the electrical treatments of negative/positive voltage stressing for sufficient time, is investigated. High and low two current states can be achieved with the electron trapping/de-trapping in the device edge after the treatments. There is imperceptible electron trapping with a current variation ratio of δI/I0 = −0.86% at −2 V. Under this condition, it results in the apparent current difference (>2 orders of magnitude) between the two current states at VG > 0. The mechanism of the current affected by Schottky barrier height of the holes is proposed for this observed phenomenon." @default.
• W2032016243 created "2016-06-24" @default.
• W2032016243 creator A5026948998 @default.
• W2032016243 creator A5079373971 @default.
• W2032016243 date "2012-08-13" @default.
• W2032016243 modified "2023-10-18" @default.
• W2032016243 title "Two states phenomenon in the current behavior of metal-oxide-semiconductor capacitor structure with ultra-thin SiO2" @default.
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• W2032016243 doi "https://doi.org/10.1063/1.4746284" @default.
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