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- W2032049574 abstract "Composite thin films of Ge and C prepared with the pulsed laser deposition method were found to exhibit enhancement of photoluminescence (PL). X-ray diffractometry and atomic force microscopy established that the structure of the as-prepared sample consisted of Ge nanocrystals and amorphous C. A blue PL from the films was found in the wavelength region of 400–550 nm with two distinct humps in its peak. For the as-prepared sample, the PL intensity was found to peak at a certain Ge:C composition ratio. For films with the same Ge:C ratio, the PL intensity was found to increase monotonically with intensity of annealing in the open atmosphere. The origin of the PL is attributed to localized Ge/O-related defects and that of the humps to the two nonbonding electrons of Ge(O). It is argued that the two nonbonding electrons are related to the intermediate Ge oxidation states (GOx, 0<x<2), one of them being related to x near 0, and the other to x near 2, that is, near the saturated GeO2 state. The observed enhancement in the PL of the Ge nanoparticles is attributed to the presence of amorphous C because it enhances the formation of Ge nanoparticles and the localized Ge/O-related defects at the Ge/C interfacial regions. This phenomenon offers a possible useful way to control the PL intensity of the film by adjusting its Ge:C ratio or its intensity of annealing." @default.
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- W2032049574 date "2003-05-09" @default.
- W2032049574 modified "2023-09-23" @default.
- W2032049574 title "Enhancement of photoluminescence in Ge nanoparticles by neighboring amorphous C in composite Ge/C thin films" @default.
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- W2032049574 doi "https://doi.org/10.1063/1.1569995" @default.
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