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- W2032083711 abstract "The CD control of the first lithography (L1) patterns is a important issue in the single-etch double patterning (SEDP)process. In this process, L1 patterns are cured either chemically or thermally and then subjected to the secondlithography (L2). A chemical curing process using a surface curing agent (SCA) often results in the CD growth due tothe positive interaction between the first and second resists. A thermal curing process using a thermal cure resist(TCR) often results in the CD loss due to the volumetric shrinkage of the L1 patterns during the L2 process. Bycombining SCA and TCR concepts, we developed a simple curing system which offers precise control of theL1 CD after double patterning. This hybrid curing system involves thermal curing followed by a liquid rinse processusing a double patterning primer (DPP). DPP is an aqueous solution formulated with SCA components and enhancespositive interaction between L1 and L2 patterns. While CD loss of 5~6nm is observed without DPP treatment, ~11nmCD growth was observed with TCR after DPP treatment. The L1 CD after double patterning was precisely controllableby post-priming bake process with the rate of -0.3nm/°C in the temperature ranging from 120 ~ 150°C. Takingadvantage of the CD growth with DPP treatment, we further developed three different advanced patterning schemes: 1.Shrink Process Assisted by Double Exposure (SPADE I), 2. Space Patterning Assisted by Double Exposure(SPADE II), and 3. Sidewall Patterning Assisted by Double Exposure (SPADE III). Using SPADE I, contact hole CDwas reduced by 10~30nm and excellent through pitch performance was observed. SPADE I can also improveLER/LWR when used in the formation of smaller trenches. SPADE II was developed for self-aligned pitch splitting ofcontact holes and SPADE III was developed for self-aligned pitch splitting of lines. In this paper, the use of DPP invarious SPADE technologies is described and its potential in the advanced patterning schemes is discussed." @default.
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- W2032083711 date "2009-12-03" @default.
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- W2032083711 title "Advanced patterning solutions based on double exposure: double patterning and beyond" @default.
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- W2032083711 doi "https://doi.org/10.1117/12.840461" @default.
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