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• W2032089665 abstract "The interaction of rhodium thin films with single‐crystal substrates of silicon leads to the formation of four silicides. RhSi forms by diffusion‐controlled kinetics at temperatures of about 350 °C with an activation energy of 1.9 eV. For long annealing times one observes the layered formation of Rh2Si at the RhSi‐Rh interface. At higher temperatures, in the vicinity of 825 °C, Rh4Si5 forms in the same way as IrSi3: it grows as islands with no measured composition gradient through the thickness of the films. Between 925 and 950 °C Rh4Si5 transforms to Rh3Si4. Oxidation experiments provide useful information about the stability of the Si‐rich phases, Rh4Si5 and Rh3Si4, and their mode of formation. The large number of silicides, four, formed in a single metal‐silicon system provides the opportunity to examine various modes of thin‐film interactions. Some striking differences in behavior in the otherwise similar systems, Ir‐Si and Rh‐Si, are briefly discussed." @default.
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• W2032089665 date "1980-01-01" @default.
• W2032089665 modified "2023-09-27" @default.
• W2032089665 title "The thin‐film formation of rhodium silicides" @default.
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• W2032089665 doi "https://doi.org/10.1063/1.327381" @default.
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