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• W2032201797 abstract "In this work, a phase-change memory (PCM) with self-assembled nanostructures and an oxidized thin phase-change layer is proposed and intensively investigated for low writing reset current by finite element analysis. Current density is significantly enhanced in our nano-contact memory because of the existence of nanostructures and oxidized phase-change layer. The writing current of our proposed memory is about 1/10-3/10 that of conventional cell, which is in good agreement with our experimental results. The heat efficiency in the nano-contact PCM cell is greatly improved and its power consumption can be as low as about 1/10 that of the conventional cell." @default.
• W2032201797 created "2016-06-24" @default.
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• W2032201797 date "2013-07-15" @default.
• W2032201797 modified "2023-09-22" @default.
• W2032201797 title "Current density enhancement nano-contact phase-change memory for low writing current" @default.
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• W2032201797 doi "https://doi.org/10.1063/1.4816080" @default.
• W2032201797 hasPublicationYear "2013" @default.
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