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• W2032208861 endingPage "330" @default.
• W2032208861 startingPage "323" @default.
• W2032208861 abstract "A modified sessile drop method, that is, a crucible method was developed to obtain a precise density value of molten silicon using a Si3N4 crucible. The density decreases linearly with increasing temperature in the range from 1689 to 1853 K. However, anomalous behavior of the density with temperature reported by another investigator was not observed. The density and the thermal expansion coefficient of molten silicon at the melting point are 2.52 Mg/m3 and 1.29×10−4 K−1, respectively. The density decreases with increasing boron concentration in silicon. The density remains almost constant in the range of the oxygen partial pressure of the argon atmosphere, PO2, from 10−27 to 10−17 MPa." @default.
• W2032208861 created "2016-06-24" @default.
• W2032208861 creator A5035888563 @default.
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• W2032208861 date "2000-01-01" @default.
• W2032208861 modified "2023-10-16" @default.
• W2032208861 title "Measurement of the Density of Molten Silicon by a Modified Sessile Drop Method" @default.
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• W2032208861 doi "https://doi.org/10.2320/matertrans1989.41.323" @default.
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