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- W2032292591 abstract "The two no-phonon emission lines at 2.336 eV ± 4 meV (A) and 2.362 eV ± 8 meV (B) characteristic of Li-doped ZnTe at 4.2 K are studied as a function of temperature (4.2 < T < 300 K) and of impurity concentration (5 × 1016 to 5 × 1018cm−3). It is found that the energy of the B transition decreases linearly with the pone; 1/3 of the donor concentration. It is shown that this law is expected theoretically for free-to-bound transitions in a compensated p-type semiconductor when the screening length is determined by the concentration of ionized impurities (Debye and Conwell model). The effect of doping on the temperature dependence of the intensity can be explained in terms of the previously proposed interpretation: conduction band-to-acceptor transition for the A-line and donor-to-valence band transition for the B-line.Die beiden Null-Phononenlinien bei 2,336 eV ± 4 meV (A) und 2,362 eV ± 8 meV (B), die fur Li-dotiertes ZnTe bei 4,2 K charakteristisch sind, werden als Funktion der Temperatur (4,2 < T < 300 K) und Dotierungskonzentration (5 × l016 bis 5 × 1018 cm−3 untersucht. Es wird gefunden, das die Energie des B-Ubergangs linear mit dem Exponenten 1/3 der Donatorkonzentration abnimmt. Es wird gezeigt, das dieses Gesetz theoretisch fur Ubergange von freien zu gebundenen Zustanden in einem kompensierten, p-leitenden Halbleiter erwartet werden kann, wenn die Abschirmlange durch die Konzentration der ionisierten Storstellen (Debye- und Conwell-Modell) bestimmt wird. Der Dotierungseinflus auf die Temperaturabhangigkeit der Intensitat last sich mit einer schon fruher vorgeschlagenen Annahme erklaren: Ubergang vom Leitungsband zum Akzeptor fur die A-Linie und Ubergang vom Donator zum Valenzband fur die B-Linie." @default.
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- W2032292591 date "1976-07-01" @default.
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- W2032292591 title "Free-to-Bound Transitions in Lithium-Doped Zinc Telluride" @default.
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- W2032292591 doi "https://doi.org/10.1002/pssb.2220760108" @default.
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