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- W2032337108 abstract "Phase pure and clean MgB2 films have been fabricated on different types of single-crystal substrate, including SiC, sapphire, MgO, LaAlO3, SrTiO3, and yttrium-stabilized ZrO2 (YSZ), via the hybrid physical–chemical vapor deposition (HPCVD) technique. Pure MgB2 films with different structural textures are obtained by selecting the substrate and its orientation, such as off-axis epitaxial MgB2 on MgO(211) or textured MgB2 on YSZ(110) substrates. Films show Tc(0) in the range 37–41 K, and residual resistivity ρ(42 K) between 0.3 and 5 µΩ cm as the substrate and film thickness are varied. The crystal structures and film morphologies are presented and discussed. Further investigations are focused on c-axis epitaxial films. Epitaxial MgB2 films with thickness about 300 nm manifest Tc(0) = 41.2 K and residual resistivity ρ(42 K) = 0.35 µΩ cm on SiC(0001) while Tc(0) = 39.5 K and ρ(42 K) = 0.27 µΩ cm on c-cut sapphire, reflecting that the films are of high quality and in the 'clean limit'. Low upper critical field and large anisotropy of the upper critical field γ comparable to the results from MgB2 single crystals are also revealed. The smooth surface of the epitaxial films, with root-mean-square (RMS) roughness less than 5 nm, makes them well qualified for device applications. Microwave performance measurements are carried out using a coplanar resonator on a 300 nm thick film on sapphire substrate and no power dependence of unloaded quality factor in the output power range of −10–25 dB is found." @default.
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- W2032337108 date "2008-12-23" @default.
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- W2032337108 title "Clean MgB<sub>2</sub>thin films on different types of single-crystal substrate fabricated by hybrid physical–chemical vapor deposition" @default.
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- W2032337108 doi "https://doi.org/10.1088/0953-2048/22/2/025002" @default.
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