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• W2032342335 endingPage "156" @default.
• W2032342335 startingPage "151" @default.
• W2032342335 abstract "Silicon carbon nitride (SiCN) films were deposited on Si(1 0 0) substrates by radio-frequency sputtering method. High-resolution X-ray diffraction, infrared absorption spectroscopy and X-ray photoelectron spectroscopy were used to investigate the composition and bonding structures of the SiCN films. The analysis indicated that Si–C, Si–N and CN bonds were formed in the SiCN films deposited at room temperature. The films grown at high temperature were found to consist of SiCN crystallites. Furthermore, atomic force microscopy was used to examine the surface morphology of the SiCN films. The field emission properties of the films were also studied." @default.
• W2032342335 created "2016-06-24" @default.
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• W2032342335 date "2003-07-01" @default.
• W2032342335 modified "2023-09-26" @default.
• W2032342335 title "Preparation and characterization of SiCN films" @default.
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• W2032342335 doi "https://doi.org/10.1016/s0925-3467(03)00077-6" @default.
• W2032342335 hasPublicationYear "2003" @default.
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