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• W2032363417 abstract "The photoluminescence (PL) emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement. Some additional radiation-induced changes in photocarrier recombination from QDs, which include a slight increase in PL emission with low and intermediate proton doses, are also examined." @default.
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• W2032363417 date "2000-04-10" @default.
• W2032363417 modified "2023-10-03" @default.
• W2032363417 title "Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots" @default.
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• W2032363417 doi "https://doi.org/10.1063/1.126259" @default.
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