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• W2032539466 abstract "Latent tracks in amorphous metallic Fe81B13.5Si3.5C2 are selectively etched in FeCl3 resulting in etch pits with wide cone opening angles. The track etch threshold corresponds to an electronic stopping Se around 3.6 keVÅ. For 3.4 < Se < 3.6 keVÅ the etch pit formation is marginal. For S < 3.4 keVÅ no etch pits were observed. This is above the threshold Se > 1.3 keVÅ required for damage creation according to resistivity measurements." @default.
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• W2032539466 date "1993-12-01" @default.
• W2032539466 modified "2023-09-30" @default.
• W2032539466 title "Stopping power dependence of ion track etching in amorphous metallic Fe81B13.5 Si3.5C2" @default.
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• W2032539466 doi "https://doi.org/10.1016/0168-583x(93)95880-e" @default.
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