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- W2032553531 abstract "Low dark current and high fill factor are two crucial characteristics for the realization of the InAs/GaSb superlattice (SL)technology as third generation focal plane arrays (FPAs). Recent development proved high performance results for thecomplementary barrier infrared detector (CBIRD) design, and a high-quality etch technique is required to minimizesurface leakage currents. We report on a n-CBIRD with 10.3 μm cutoff, exhibiting a responsivity of 1.7 A/W and darkcurrent density of 1×10 -5 A/cm 2 at 77K under 0.2 V bias, without AR coating and without passivation. Results from fourdifferent mesa isolation techniques are compared on single element diodes: chemical wet etch usingC 4 H 6 O 6 :H 3 PO 4 :H 2 O 2 :H 2 O, BCl 3 /Ar inductively coupled plasma (ICP), CH4/H2/Ar ICP, and CH 4 /H 2 /BCl 3 /Cl 2 /Ar ICP.The CH 4 /H 2 /BCl 3 /Cl 2 /Ar etched structures yielded more than 2.5 times improvement in dark current density and nearverticalsidewalls. Using this etching technique, we then implement a 1k x 1k p-CBIRD array with 11.5 μm cutoff andpeak responsivity of 3 A/W. Operating at T = 80K, the array yielded a 81% fill factor with 98% operability andperformance results of 21% quantum efficiency, 53 mK NEuT, and NEI of 6.9×10 13 photons/sec-cm 2 ." @default.
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- W2032553531 date "2011-01-22" @default.
- W2032553531 modified "2023-10-03" @default.
- W2032553531 title "Pixel isolation of low dark-current large-format InAs/GaSb superlattice complementary barrier infrared detector focal plane arrays with high fill factor" @default.
- W2032553531 doi "https://doi.org/10.1117/12.875354" @default.
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