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• W2032673011 abstract "Abstract The fabrication of Schottky barrier structures by evaporating aluminium onto Langmuir-Blodgett films of a substituted silicon phthalocyanine is described. The electrical characteristics of the resulting diodes are similar to those obtained using other thin film techniques and indicate that the substituted silicon phthalocyanine is a p-type semiconductor. We also show that Langmuir-Blodgett films of this material can be effectively used to control the forward current in Au/n-Si diodes. Photovoltaic measurements are reported for both these and the Schottky barrier devices." @default.
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• W2032673011 date "1987-05-01" @default.
• W2032673011 modified "2023-09-27" @default.
• W2032673011 title "Photoelectric properties of substituted silicon phthalocyanine Langmuir-Blodgett film Schottky barrier and metal/insulator/semiconductor devices" @default.
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• W2032673011 doi "https://doi.org/10.1016/0040-6090(87)90291-4" @default.
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