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• W2032710614 abstract "We have investigated and modelled the diffusion of boron implanted into crystalline silicon in the form of boron difluoride BF2+. We have used published data for BF2+ implanted with an energy of 2.2 keV in crystalline silicon. Fluorine effects are considered by using vacancy-fluorine pairs which are responsible for the suppression of boron diffusion in crystalline silicon. Following Uematsu's works, the simulations satisfactory reproduce the SIMS experimental profiles in the 800–1000 °C temperature range. The boron diffusion model in silicon of Uematsu has been improved taking into account the last experimental data." @default.
• W2032710614 created "2016-06-24" @default.
• W2032710614 creator A5059076049 @default.
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• W2032710614 date "2008-12-01" @default.
• W2032710614 modified "2023-09-27" @default.
• W2032710614 title "Diffusion modelling of low-energy ion-implanted BF2 in crystalline silicon: Study of fluorine vacancy effect on boron diffusion" @default.
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• W2032710614 doi "https://doi.org/10.1016/j.mseb.2008.10.001" @default.
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