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- W2032893276 abstract "A thorough investigation of the possibility of application of Oxide-Trap Charge-Pumping (OTCP) extraction method to evaluate the radiation-induced traps in short LDD-transistors is conducted. We have successfully demonstrated that the OTCP is able not only to determine all kind of traps induced by radiation in narrow LDD-transistors, but also in short LDD-transistors. Firstly, we have presented a methodical approach to take out the LDD effect from charge pumping curves, leaving only the effective channel length charge pumping. Secondly, we have extracted the radiation-induced interface-, oxide, and border-trap for LDD-NMOSFET and LDD-PMOSFET with varied gate length and fixed gate width. Finally, we have performed a comparison between OTCP and Sub-Threshold Slop (STS), Mid-Gap (MG), Dual-Transistor Charge-Pumping (DTCP), and Dual-Transistor Border-trap (DTBT). OTCP method shows perfect agreement with all methods regarding oxide-trap (ΔN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ot</sub> ) extraction versus gate length. However, it does not correlate with STS and MG for interface-trap (ΔN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</sub> ), because the last methods overestimate ΔN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</sub> by sensing border-trap (ΔN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>bt</sub> ) like interface-trap. We have observed the same behaviors in the narrow LDD-transistors." @default.
- W2032893276 created "2016-06-24" @default.
- W2032893276 creator A5051995256 @default.
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- W2032893276 date "2009-09-01" @default.
- W2032893276 modified "2023-10-18" @default.
- W2032893276 title "Using Oxide-Trap Charge-Pumping method in radiation reliability analysis of short lightly doped drain transistor" @default.
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- W2032893276 doi "https://doi.org/10.1109/radecs.2009.5994552" @default.
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