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• W2032912073 abstract "Metal-Oxide-Semiconductor (MOS) capacitors with Bi2Te3 thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi2Te3 thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi2Te3, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent endurance, and the complementary metal–oxide–semiconductor compatibility, the Bi2Te3 embedded MOS structures are very interesting for memory application." @default.
• W2032912073 created "2016-06-24" @default.
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• W2032912073 date "2014-12-08" @default.
• W2032912073 modified "2023-10-18" @default.
• W2032912073 title "Polarization of Bi₂Te₃ thin film in a floating-gate capacitor structure" @default.
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• W2032912073 doi "https://doi.org/10.1063/1.4904003" @default.
• W2032912073 hasPublicationYear "2014" @default.
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