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• W2032913045 abstract "Different aspects of X-ray lithography with a proven capability for the fabrication of 0.1 μm lines and 0.5 μm devices such as ULSI and multi-megabit memory are discussed. The technical, dimensional and economic features of modern X-ray sources such as synchrotron with classical, normal and superconducting storage rings, have been compared. Materials fully transparent or opaque to X-rays do not exist and so the choice of X-ray mask substrate and patterning of absorber on it are rather critical. EBL, FIBL, RIE, XRL and other techniques used for preparing submicron masks have been dealt with. The sensitivity and resolution of 16 positive and negative X-ray resists vis-à-vis specific sources and characteristic features of 7 XRL systems are compared. Alignment schemes using laser controlled stage and visible lights are discussed. R&D as well as commercial systems and results like quarter micron patterns, 0.5 μm CMOS, SAW BPF and large aspect ratio grooves are demonstrated." @default.
• W2032913045 created "2016-06-24" @default.
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• W2032913045 date "1991-01-01" @default.
• W2032913045 modified "2023-09-26" @default.
• W2032913045 title "An overview of x-ray lithography for use in semiconductor device preparation" @default.
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• W2032913045 doi "https://doi.org/10.1016/0042-207x(91)90134-5" @default.
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